What does PACE stand for?

Policy, Advocacy, and Communication Enhanced

Plano Academic and Creative Education

Plant Acquisition and Construction Equipment

Plant and Capital Equipment

Plasma-Assisted Chemical Etching

Plasma Assisted Chemical Etching

Plasma Assisted Chemical Etching (PACE) is a cutting-edge technique in the field of Chemistry, utilized for the precise removal of materials from surfaces at the microscopic level. This method leverages the reactive properties of plasma to achieve highly controlled etching processes, essential for the fabrication of semiconductor devices and nanomaterials. PACE stands out for its ability to produce clean, anisotropic etches with minimal damage to the underlying material, making it indispensable in the electronics industry.

The versatility of PACE extends beyond semiconductor manufacturing, finding applications in the creation of microelectromechanical systems (MEMS) and optical components. Its precision and efficiency have paved the way for advancements in nanotechnology, enabling the development of devices with unprecedented performance and miniaturization. As the demand for smaller and more complex electronic components grows, PACE continues to play a pivotal role in meeting these challenges, driving innovation in material science and engineering.

Plasma Assisted Cleaning By Electrostatics

Platform-Aware Compilation Environment

Pollutoon Abatement Costs and Expenditures